Electronics manufacturing company, Samsung, has revealed the industry’s very first collection production of 3GB low power double data rate 3 (LPDDR3) mobile DRAM, the highest density mobile memory for smartphones.
Samsung says that this chip will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices.
The Samsung 3GB LPDDR3 mobile DRAM uses six of the industry’s smallest 20-nanometer (nm) class four gigabit (GB) LPDDR3 chips, in a symmetrical structure of two sets of three chips stacked in a single package only 0.8 millimeters high.
The ultra slim memory chip will enable thinner Smartphone designs and allow additional battery space, while giving a data shift speed of up to 2133 megabits per second per pin.
“Three gigabyte mobile DRAM will be adopted in the most up-to-date, high-end Smartphones starting in the second half of this year — an initial adoption that will expand to most high-end Smartphones worldwide next year,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “We will develop a new 3GB LPDDR3 solution based on four 6Gb LPDDR3 DRAM chips by symmetrically stacking two chips on each side, which will boost Smartphone performance to the next level by year-end.”
The increased DRAM capacity, customers will enjoy high-quality, full HD video playback and faster multitasking on their Smartphone.
Samsung’s 3GB LPDDR3 DRAM connects with a mobile application processor using two symmetrical data transfer channels, each connected to a 1.5GB storage part. Though asymmetric data flow can cause sharp performance dips at certain settings, the symmetrical structure avoids such issues, while maximizing system level performance.