Samsung Designs 3GB Memory Chips For Next-Generation Smartphones


samsung chips

Electronics manufacturing company, Samsung, has revealed the industry’s very first collection production of 3GB low power double data rate 3 (LPDDR3) mobile DRAM, the highest density mobile memory for smartphones.

Samsung says that this chip will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices.

The Samsung 3GB LPDDR3 mobile DRAM uses six of the industry’s smallest 20-nanometer (nm) class four gigabit (GB) LPDDR3 chips, in a symmetrical structure of two sets of three chips stacked in a single package only 0.8 millimeters high.

The ultra slim memory chip will enable thinner Smartphone designs and allow additional battery space, while giving a data shift speed of up to 2133 megabits per second per pin.

“Three gigabyte mobile DRAM will be adopted in the most up-to-date, high-end Smartphones starting in the second half of this year — an initial adoption that will expand to most high-end Smartphones worldwide next year,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “We will develop a new 3GB LPDDR3 solution based on four 6Gb LPDDR3 DRAM chips by symmetrically stacking two chips on each side, which will boost Smartphone performance to the next level by year-end.”

The increased DRAM capacity, customers will enjoy high-quality, full HD video playback and faster multitasking on their Smartphone.

Samsung’s 3GB LPDDR3 DRAM connects with a mobile application processor using two symmetrical data transfer channels, each connected to a 1.5GB storage part. Though asymmetric data flow can cause sharp performance dips at certain settings, the symmetrical structure avoids such issues, while maximizing system level performance.

Current memory storage capacity for PCs is about 4GB, offering 3GB of DRAM memory on mobile devices should help most users enjoy PC-like performance, in narrowing the performance gap between PC and Smartphone computing.